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 HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6805 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3
HMBT1815
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.
Absolute Maximum Ratings
SOT-23
* Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 C Junction Temperature...................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 225 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ......................................................................................... 60 V VCEO Collector to Emitter Voltage...................................................................................... 50 V VEBO Emitter to Base Voltage.............................................................................................. 5 V IC Collector Current........................................................................................................ 150 mA
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 60 50 5 120 25 80 Typ. Max. 100 100 250 1 700 3.5 Unit V V V nA nA mV V Test Conditions IC=100uA IC=1mA IE=10uA VCB=60V VEB=5V IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
MHz pF
Classification Of hFE1
Rank Range C4Y 120-240 C4G 200-400 C4B 350-700
HMBT1815
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
10000 1000
Spec. No. : HE6805 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 2/3
Saturation Voltage & Collector Current
VCE(sat) @ IC=10IB
1000
125 C
o
Saturation Voltage (mV)
hFE
25 C 100
o
100
75 C
o
75 C
o
125 C
o
hFE @ VCE=6V 25 C 10 0.1 1 10 100 1000 10 0.1 1 10 100 1000
o
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VBE(sat) @ IC=10IB 10
Capacitance & Reverse-Biased Voltage
Saturation Voltage (mV)
75 C 1000 25 C
o
o
Capacitance (pF)
Cob
125 C
o
100 0.1 1 10 100 1000
1 0.1 1 10 100
Collector Current-IC (mA)
Reverse-Biased Voltage (V)
1 1000
Safe Operating Area Cutoff Frequency & Collector Current
1
Safe Operating Area
PT=1ms
Collector Current-IC (mA)
Collector Current-IC (mA) . Cutoff Frequency (MHz)..
PT=1ms PT=100ms
PT=100ms
VCE=10V
PT=1s 0.1 100
0.1
PT=1s
0.01 10 11 10 10 100 100
0.01 1 10 100
Collector Current (mA) Forward Voltage-VCE (V)
Forward Voltage-VCE (V)
HMBT1815
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6805 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 3/3
A L
Marking:
3 BS 1 V G 2
C4
Rank Code Control Code
3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N
C
D
H
K
J
Style: Pin 1.Base 2.Emitter 3.Collector *: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT1815
HSMC Product Specification


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